秘密の入口mini_十八款禁用免费d尿道口_蘑菇传媒18勿秘密入口免费

刘上锋
2024/11/07 来源: 编辑:


刘上锋 | 助理教授
sfliu@gbu.edu.cn

四川大学,微电子科学与工程,学士

北京大学,凝聚态物理,博士
科研领域
  • 超宽禁带半导体材料的外延生长与光电器件的制备,氮化物半导体材料
  • 深紫外光电器件
工作经历
  • 2022.11-2024.11,卡迪夫大学,博士后
  • 2024.11-至今,大湾区大学(筹),助理教授
主要成果
  • 从事基于AlN的第四代超宽禁带半导体材料的MOCVD外延生长及光电器件的研发与应用研究。通过图形化蓝宝石衬底上采用侧向外延技术,结合高温热退火技术和应变调控工艺,成功制备出具有高晶体质量的AlN模板,实现了高能量转化效率的深紫外LED和micro-LED器件;
  • 在Advanced Functional Materials, Journal of semiconductor, phys. status solidi (RRL), Applied Physics Letters, Superlattices Microstruct.等期刊发表SCI论文20余篇(一作6篇,1篇封面)。
代表性成果
  • S. Liu, Y. Yuan*, L. Huang, J. Zhang, T. Wang, T. Li, J. Kang, L. Luo, Z. Chen, X. Sun, and X. Wang*, Drive high power UVC-LED wafer into low-cost 4-inch era: effect of strain modulation, Adv. Funct. Mater. 2112111 (2022).
  • S. Liu, W. Luo, D. Li, Y. Yuan, W. Tong, J. Kang, Y. Wang, D. Li, X. Rong, T. Wang, Z. Chen, Y. Li, H. Wang, W. Wang, J. Hoo, L. Yan, S. Guo, B. Shen, Z. Cong*, and X. Wang*. Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source, Adv. Funct. Mater. 2008452(2021).
  • S. Liu, Y. Yuan*, S. Sheng, T. Wang, J. Zhang, L. Huang, X. Zhang, J. Kang, W. Luo, Y. Li, H. Wang, W. Wang, C. Xiao, Y. Liu, Q. Wang, and X. Wang*, Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. Journal of Semiconductors, 122804(2021).
  • S. Liu, J. Hoo, Z. Chen, L. Yan, T. Wang, S. Sheng, X. Sun, Y. Yuan, S. Guo, and X. Wang*, Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications. physica status solidi (RRL), 2100363(2021).
  • S. Liu, BP. Ratiu, H. Jia, Z. Yan, K.M. Wong, M. Martin, M. Tang, T. Baron, H. Liu, Q. Li*, Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon, Applied Physics Letters, 125.8 (2024).


郯城县| 白水县| 南涧| 绍兴市| 玉山县| 鄯善县| 治县。| 安新县| 同德县| 石城县|